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?2002 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.5 features ? precision fixed operating frequency (100/67/50khz) ? low start-up current(typ. 100ua) ? pulse by pulse current limiting ? over current protection ? over voltage protection (min. 25v) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode applications ? smps for vcr, svr, stb, dvd & dvcd ? smps for printer, facsimile & scanner ? adaptor for camcorder description the fairchild power switch(fps) product family is specially designed for an off-line smps with minimal external components. the fairchild power switch(fps) consists of a high voltage power sensefet and a current mode pwm ic. included pwm controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. compared to a discrete mosfet and a pwm controller or an rccsolution, a fairchild power switch(fps) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. it has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter internal block diagram #3 v cc 32v 5 a 9v 2.5r 1r 1ma 0.1v + ? over voltage s/d + ? 7.5v 27v thermal s/d s r q power on reset + ? l.e.b s r q osc 5v vref internal bias good logic sfet #2 drain #1 gnd #4 fb (*#3 v cc ) (*#4 fb) (*#1.6.7.8 drain) (*#2 gnd) *asterisk - ka5m0365rn, ka5l0365rn ka5x03xx-series ka5h0365r, ka5m0365r, ka5l0365r, ka5m0365rn, ka5l0365rn, ka5h0380r, ka5m0380r, ka5l0380r fairchild power switch(fps) to-220f-4l 1. gnd 2. drain 3. v cc 4. fb 1 8-dip 1.6.7.8 drain 2. gnd 3. v cc 4. fb 5. nc
ka5x03xx-series 2 absolute maximum ratings (ta=25 c, unless otherwise specified) note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 51mh, starting tj = 25 c 3. l = 13 h, starting tj = 25 c characteristic symbol value unit ka5h0365r, ka5m0365r, ka5l0365r maximum drain voltage v d,max 650 v drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain current pulsed (1) i dm 12.0 a dc continuous drain current (t c =25 c) i d 3.0 a dc continuous drain current (t c =100 c) i d 2.4 a dc single pulsed avalanche energy (2) e as 358 mj maximum supply voltage v cc,max 30 v analog input voltage range v fb -0.3 to v sd v total power dissipation p d 75 w derating 0.6 w/ c operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c ka5h0380r, ka5m0380r, ka5l0380r maximum drain voltage v d,max 800 v drain-gate voltage (r gs =1m ? )v dgr 800 v gate-source (gnd) voltage v gs 30 v drain current pulsed (1) i dm 12.0 a dc continuous drain current (t c =25 c) i d 3.0 a dc continuous drain current (t c =100 c) i d 2.1 a dc single pulsed avalanche energy (2) e as 95 mj maximum supply voltage v cc,max 30 v analog input voltage range v fb -0.3 to v sd v total power dissipation p d 75 w derating 0.6 w/ c operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c
ka5x03xx-series 3 absolute maximum ratings (ta=25 c, unless otherwise specified) note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 51mh, starting tj = 25 c 3. l = 13 h, starting tj = 25 c characteristic symbol value unit ka5m0365rn, ka5l0365rn maximum drain voltage v d,max 650 v drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain current pulsed (1) i dm 12.0 a dc continuous drain current (ta=25 c) i d 0.42 a dc continuous drain current (ta=100 c) i d 0.28 a dc single pulsed avalanche energy (2) e as 127 mj maximum supply voltage v cc,max 30 v analog input voltage range v fb -0.3 to v sd v total power dissipation p d 1.56 w derating 0.0125 w/ c operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c
ka5x03xx-series 4 electrical characteristics (sensefet part) (ta = 25 c unless otherwise specified) note: 1. pulse test: pulse width 300 s, duty 2% 2. parameter symbol condition min. typ. max. unit ka5h0365r, ka5m0365r, ka5l0365r drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max. rating, v gs =0v - - 50 a v ds =0.8max. rating, v gs =0v, t c =125 c - - 200 a static drain-source on resistance (note) r ds(on) v gs =10v, i d =0.5a - 3.6 4.5 ? forward transconductance (note) gfs v ds =50v, i d =0.5a 2.0 - - s input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 720 - pf output capacitance coss - 40 - reverse transfer capacitance crss - 40 - turn on delay time td(on) v dd =0.5bv dss , i d =1.0a (mosfet switching time is essentially independent of operating temperature) - 150 - ns rise time tr - 100 - turn off delay time td(off) - 150 - fall time tf - 42 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =1.0a, v ds =0.5bv dss (mosfet switching time is essentially independent of operating temperature) --34 nc gate-source charge qgs - 7.3 - gate-drain (miller) charge qgd - 13.3 - ka5h0380r, ka5m0380r, ka5l0380r drain-source breakdown voltage bv dss v gs =0v, i d =50 a 800 - - v zero gate voltage drain current i dss v ds =max. rating, v gs =0v - - 250 a v ds =0.8max. rating, v gs =0v, t c =125 c - - 1000 a static drain-source on resistance (note) r ds(on) v gs =10v, i d =0.5a - 4.0 5.0 ? forward transconductance (note) gfs v ds =50v, i d =0.5a 1.5 2.5 - s input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 779 - pf output capacitance coss - 75.6 - reverse transfer capacitance crss - 24.9 - turn on delay time td(on) v dd =0.5bv dss , i d =1.0a (mosfet switching time is essentially independent of operating temperature) -40- ns rise time tr - 95 - turn off delay time td(off) - 150 - fall time tf - 60 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =1.0a, v ds =0.5bv dss (mosfet switching time is essentially independent of operating temperature) --34 nc gate-source charge qgs - 7.2 - gate-drain (miller) charge qgd - 12.1 - s 1 r --- - =
ka5x03xx-series 5 electrical characteristics (sensefet part) (ta = 25 c unless otherwise specified) note: 1. pulse test: pulse width 300 s, duty 2% 2. parameter symbol condition min. typ. max. unit ka5m0365rn, ka5l0365rn drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max. rating, v gs =0v - - 50 a v ds =0.8max. rating, v gs =0v, t c =125 c - - 200 a static drain-source on resistance (note) r ds(on) v gs =10v, i d =0.5a - 3.6 4.5 ? forward transconductance (note) gfs v ds =50v, i d =0.5a 2.0 - - s input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 314.9 - pf output capacitance coss - 47 - reverse transfer capacitance crss - 9 - turn on delay time td(on) v dd =0.5bv dss , i d =1.0a (mosfet switching time is essentially independent of operating temperature) -11.2- ns rise time tr - 34 - turn off delay time td(off) - 28.2 - fall time tf - 32 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =1.0a, v ds =0.5bv dss (mosfet switching time is essentially independent of operating temperature) 11.93 nc gate-source charge qgs - 1.95 - gate-drain (miller) charge qgd 6.85 s 1 r --- - =
ka5x03xx-series 6 electrical characteristics (control part) (continued) (ta = 25 c unless otherwise specified) note: 1. these parameters, although guaranteed, are not 100% tested in production 2. these parameters, although guaranteed, are tested in eds(water test) process characteristic symbol test condition min. typ. max. unit uvlo section start threshold voltage v start v fb =gnd 14 15 16 v stop threshold voltage v stop v fb =gnd 8.499.6 v oscillator section initial accuracy f osc ka5h0365r ka5h0380r 90 100 110 khz initial accuracy f osc ka5m0365r ka5m0365rn ka5m0380r 61 67 73 khz initial accuracy f osc ka5l0365r ka5l0365rn ka5l0380r 45 50 55 khz frequency change with temperature (2) --25 c ta +85 c- 5 10 % maximum duty cycle dmax ka5h0365r ka5h0380r 62 67 72 % maximum duty cycle dmax ka5m0365r ka5m0365rn ka5m0380r ka5l0365r ka5l0365rn ka5l0380r 72 77 82 % feedback section feedback source current i fb ta=25 c, 0v< vfb< 3v 0.7 0.9 1.1 ma shutdown feedback voltage v sd vfb> 6.5v 6.9 7.5 8.1 v shutdown delay current idelay ta=25 c, 5v vfb v sd 456 a reference section output voltage (1) vref ta=25 c 4.80 5.00 5.20 v temperature stability (1)(2) vref/ ? t-25 c ta +85 c-0.30.6mv/ c current limit(self-protection)section peak current limit i over max. inductor current 1.89 2.15 2.41 a protection section over voltage protection v ovp v cc > 24v 25 27 29 v thermal shutdown temperature (tj) (1) t sd - 140 160 - c total standby current section start-up current i start v cc =14v - 100 170 a operating supply current (control part only) i op v cc < 28 - 7 12 ma
ka5x03xx-series 7 typical performance characteristics(sensefet part) (ka5h0365r, ka5m0365r, ka5l0365r) 110 0. 1 1 10 @not es: 1. 300 s pulse test 2. t c = 25 o c v gs top : 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom:4.5v i d , drain current [a] v ds , drain-source voltage [v] 246810 0.1 1 10 @not es : 1. v ds = 30v 2. 300 s pulse test -25 o c 25 o c 150 o c i d , drain current [a] v gs , gate-source voltage [v] 012345 0 1 2 3 4 5 6 7 @ note : tj=25 vgs=10v vgs=20v r ds( on) , [ ? ] drain-source on-resistance i d ,drain current [a] 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 @ notes : 1. vgs = 0 v 2. 300 s pulse test 25 o c 150 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 0 100 200 300 400 500 600 700 c rss c oss c iss c iss = c gs + c gd (c ds = short ed) c oss = c ds + c gd c rss = c gd capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 0 2 4 6 8 10 v ds =520v v ds =320v v ds =130v @ note : i d =3.0a v gs ,gate-source voltage[v] q g ,total gate charge [nc] figure 1. output characteristics figure 2. transfer characteristics figure 3. on-resistance vs. drain current figure 4. source-drain diode forward voltage figure 5. capacitance vs. drain-source voltage figure 6. gate charge vs. gate-source voltage
ka5x03xx-series 8 typical performance characteristics (continued) - 50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 @ no t es : 1. v gs = 0v 2. i d = 250 a t j , junction temperature [ o c] bv dss , (normalized) drain-source breakdown voltage - 50 0 50 100 150 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 @ n ot es : 1. v gs = 10v 2. i d = 1. 5 a t j , junction temperature [ o c] r ds(on) , (normalized) drain-source on-resistance 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 100 s 1 ms 10 ms @ notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 d=0.5 @ notes : 1. z jc (t)=1.25 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t c =p dm *z jc (t) z jc (t) , thermal response t 1 , square wave pulse duration [sec] figure 7. breakdown voltage vs. temperature figure 8. on-resistance vs. temperature figure 9. max. safe operating area figure 10. max. drain current vs. case temperature figure 11. thermal response
ka5x03xx-series 9 typical performance characteristics (continued) (ka5h0380r, ka5m0380r, ka5l0380r) 10 0 10 1 10 -1 10 0 10 1 @notes: 1. 300 s pulse test 2. t c = 25 o c v gs top : 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom:4.5v i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 @ n ot es : 1. v ds = 30 v 2. 300 s pulse test - 25 o c 25 o c 150 o c i d , drain current [a] v gs , gate-source voltage [v] 0.4 0.6 0.8 1.0 0.1 1 10 @ n ot es : 1. v gs = 0v 2. 300 s pulse test 25 o c 150 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 0 100 200 300 400 500 600 700 800 900 1000 c rss c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 @ note : i d =3.0a v ds =640v v ds =400v v ds =160v v gs ,gate-source voltage[v] q g ,total gate charge [nc] 01234 0 1 2 3 4 5 6 7 8 vgs=10v vgs=20v @ note : tj=25 fig3. on-resistance vs. drain current r ds( on) , [ ? ] drain-source on-resistance i d ,drain current figure 1. output characteristics figure 2. thansfer characteristics figure 3. on-resistance vs. drain current figure 4. source-drain diode forward voltage figure 5. capacitance vs. drain-source voltage figure 6. gate charge vs. gate-source voltage
ka5x03xx-series 10 typical performance characteristics (continued) (ka5h0380r, ka5m0380r, ka5l0380r) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 d=0.5 @ notes : 1. z jc (t)=1.25 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t c =p dm *z jc (t) z jc (t) , thermal response t 1 , square wave pulse duration [sec] - 50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 @ no t e s : 1. v gs = 0v 2. i d = 250 a t j , junction temperature [ o c] bv dss , (normalized) drain-source breakdown voltage - 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] @ no t e s: 1. v gs = 10v 2. i d = 1.5 a 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 s dc 10 s 1 ms 10 ms @ notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d , drain current [a] t c , case temperature [ o c] figure 7. breakdown voltage vs. temperature figure 8. on-resistance vs. temperature figure 9. max. safe operating area figure 10. max. drain current vs. case temperature figure 11. thermal response
ka5x03xx-series 11 typical performance characteristics(sensefet part) (continued) (ka5m0365rn, ka5l0365rn) 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v note : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 note 1. v ds = 50v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 01234567 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 150 note : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 100 200 300 400 500 600 700 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 024681012 0 2 4 6 8 10 12 v ds = 325v v ds = 130v v ds = 520v note : i d = 3.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] figure 1. output characteristics figure 2. transfer characteristics figure 3. on-resistance vs. drain current figure 4. source-drain diode forward voltage figure 5. capacitance vs. drain-source voltage figure 6. gate charge vs. gate-source voltage
ka5x03xx-series 12 typical performance characteristics (continued) ( ka5m0365rn, ka5l0365rn) -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 note : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -50 0 50 100 150 0.5 1.0 1.5 2.0 2.5 note : 1. v gs = 10 v 2. i d = 1.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 7. breakdown voltage vs. temperature figure 8. on-resistance vs. temperature figure 9. max. safe operating area figure 10. max. drain current vs. case temperature figure 11. thermal response 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 dc 10 s 1 s 100 ms 10 ms 1 ms 100 s 10 s operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 i d , drain current [a] t c , case temperature [? ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.1 1 10 0.05 0.02 0.01 single pulse 0.2 0.1 d=0.5 ? notes : 1. z ?jc (t) = 80 ? /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) z ?jc (t), thermal response t 1 , square wave pulse duration [sec]
ka5x03xx-series 13 typical performance characteristics (control part) (continued) (these characteristic graphs are normalized at ta = 25 c) fig.1 operating frequency 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 1 00 1 25 1 50 fos c fig.2 feedback source current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 ifb fig.3 operating current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 iop fig.4 max inductor current 0.8 0.85 0.9 0.95 1 1.05 1.1 -25 0 25 50 75 100 125 150 ipeak fig.5 start up current 0.5 0.7 0.9 1.1 1.3 1.5 -25 0 25 50 75 100 125 150 is tart fig.6 start threshold voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vs ta rt figure 1. operating frequency figure 2. feedback source current figure 3. operating supply current figure 4. peak current limit figure 5. start up current figure 6. start threshold voltage i over
ka5x03xx-series 14 typical performance characteristics (continued) (these characteristic graphs are normalized at ta = 25 c) fig.7 stop threshold voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vs to p fig.8 maximum duty cycle 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 dmax fig.9 vcc zener voltage 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 vz fig.10 shutdown feedback voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vs d fig.11 shutdown delay current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 idelay fig.12 over voltage protection 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vo vp figure 7. stop threshold voltage figure 8. maximum duty cycle figure 9. v cc zener voltage figure 10. shutdown feedback voltage figure 11. shutdown delay current figure 12. over voltage protection
ka5x03xx-series 15 typical performance characteristics (continued) (these characteristic graphs are normalized at ta = 25 c) figure13. soft start voltage figure 14. static drain-source on resistance fig.13 soft start voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vs s fig.14 drain source turn-on resistance 0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 150 rdson ()
ka5x03xx-series 16 package dimensions to-220f-4l
ka5x03xx-series 17 package dimensions (continued) to-220f-4l(forming)
ka5x03xx-series 18 package dimensions (continued) 8-dip
ka5x03xx-series 19 ordering information tu :non forming type ydtu : forming type product number package marking code bv dss f osc r ds(on) ka5h0365rtu to-220f-4l 5h0365r 650v 100khz 3.6 ? ka5h0365rydtu to-220f-4l(forming) ka5m0365rtu to-220f-4l 5m0365r 650v 67khz 3.6 ? ka5m0365rydtu to-220f-4l(forming) ka5l0365rtu to-220f-4l 5l0365r 650v 50khz 3.6 ? ka5l0365rydtu to-220f-4l(forming) ka5m0365rn 8-dip 5m0365r 650v 67khz 3.6 ? ka5l0365rn 8-dip 5l0365r 650v 50khz 3.6 ? product number package marking code bv dss f osc r ds(on) ka5h0380rtu to-220f-4l 5h0380r 800v 100khz 4.6 ? ka5h0380rydtu to-220f-4l(forming) ka5m0380rtu to-220f-4l 5m0380r 800v 67khz 4.6 ? KA5M0380RYDTU to-220f-4l(forming) ka5l0380rtu to-220f-4l 5l0380r 800v 50khz 4.6 ? ka5l0380rydtu to-220f-4l(forming)
ka5x03xx-series 12/12/02 0.0m 001 stock#dsxxxxxxxx ? 2002 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.

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